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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6500 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 90V(Min) *Wide Area of Safe Operation APPLICATIONS *Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VCER VEBO IC ICM IB PD TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage RBE= 50 Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Total Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 120 90 110 7 4 5 3 35 200 -65~200 UNIT V V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N6500 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 90 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 50 110 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(sat) ICEV Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE= 110V; VBE= -1.5V VCE= 110V; VBE= -1.5V; TC= 150 VCE= 70V; IB= 0 2.5 5 10 5 V Collector Cutoff Current mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 25 mA hFE DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current-Gain--Bandwidth Product IC= 3A; VCE= 2V 15 60 Is/b fT VCE= 40V, t= 1.0s, Nonrepetitive 0.4 A IC= 0.5A; VCE= 10V 6 MHz COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 175 pF isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2N6500
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